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TSDF1220F
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Description
The main purpose of this bipolar transistor is broadband amplification up to more than 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. . In addition to space savings, the SOT-490 provides a higher level of reliability than other 3-pin packages, such as more resistance to moisture. Due to the short length of its leads the SOT-490 is also reducing package inductances resulting in some better electrical performance. All of these aspects make this device an ideal choice for demanding RF applications
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2
3
16867
Electrostatic sensitive device. Observe precautions for handling.
Applications
For low noise applications such as preamplifiers, mixers and oscillators in analog and digital TV-systems (e.g., satellite tuners) up to microwave frequencies.
Features
* * * * * Low power applications Very low noise figure e3 High transition frequency fT = 12 GHz Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Mechanical Data
Typ: TSDF1220F Case: SOT-490 Plastic case Weight: approx. 2.5 mg Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Parts Table
Part TSDF1220F F2 Marking SOT-490 Package
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Tamb 60 C Test condition Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 9 6 2 40 200 150 - 65 to + 150 Unit V V V mA mW C C
Document Number 85106 Rev. 1.3, 02-May-05
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TSDF1220F
Vishay Semiconductors Maximum Thermal Resistance
Parameter Junction ambient
1) 1)
Test condition
Symbol RthJA
Value 450
Unit K/W
on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 m Cu
Electrical DC Characteristics
Tamb = 25 C, unless otherwise specified Parameter Collector-emitter cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage Test condition VCE = 12 V, VBE = 0 VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 IC = 1 mA, IB = 0 IC = 30 mA, IB = 3 mA Symbol ICES ICBO IEBO V(BR)CEO VCEsat hFE 50 6 0.1 100 0.5 150 Min Typ. Max 100 100 2 Unit A nA A V V
DC forward current transfer ratio VCE = 5 V, IC = 20 mA
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Document Number 85106 Rev. 1.3, 02-May-05
TSDF1220F
Vishay Semiconductors Electrical AC Characteristics
Tamb = 25 C, unless otherwise specified Parameter Transition frequency Collector-base capacitance Collector-emitter capacitance Emitter-base capacitance Noise figure Power gain Test condition VCE = 5 V, IC = 20 mA, f = 1 GHz VCB = 1 V, f = 1 MHz VCE = 1 V, f = 1 MHz VEB = 0.5 V, f = 1 MHz VCE = 5 V, IC = 3 mA, ZS = ZSopt, ZL = 50 , f = 2 GHz VCE = 5 V, IC = 20 mA, ZS = ZSopt, ZL = 50 , f = 2 GHz VCE = 5 V, IC = 20 mA, f = 2 GHz, ZO = 50 VCE = 5 V, IC = 20 mA, f = 2 GHz Symbol fT Ccb Cce Ceb F Gpe Min Typ. 12 0.3 0.35 0.5 1.2 13.5 Max Unit GHz pF pF pF dB dB
Transducer gain Third order intercept point at output
|S21se|2 IP3
12 22
dB dBm
Package Dimensions in mm
0.6 (0.023) 0.8 (0.031)
0.1 A
3 x 0.20 (0.008) 3 x 0.30 (0.012)
0.1 B
1.5 (0.059) 1.7 (0.066) 0.4 (0.016)
ISO Method E
0.65(0.026)
0.75 (0.029) 0.95 (0.037)
1.15(0.045)
16866
0.5 (0.016) 1.0 (0.039)
0.5 (0.016)
Document Number 85106 Rev. 1.3, 02-May-05
0.10 (0.004) 0.20 (0.008)
1.5 (0.059) 1.7 (0.066)
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TSDF1220F
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85106 Rev. 1.3, 02-May-05

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